A double quantum dot defined by top gates in a single crystalline InSb nanosheet*

We report on the transport study of a double quantum dot (DQD) device made from freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and DQD defined top gate technique. Through measurements, we demonstrate how (QD) can be in an tuning voltages applied to gates. also measure charge stability diagrams show that states inter-dot coupling between two individual QDs efficiently regulated Numerical simulations for potential profile density distribution have been performed results support experimental findings provide better understanding fabrication characteristics achieved two-dimensional possesses pronounced benefits lateral scaling thus serve as new building block developments computation simulation technologies.